Infineon · FETs & Power MOSFETs · MPN IAUCN08S7N016TATMA1
No reviews yet — be the first to review Infineon IAUCN08S7N016TATMA1.
| Output Capacitance(Coss) | 2.301nF |
|---|---|
| Pd - Power Dissipation | 205W |
| Gate Charge(Qg) | 83nC |
| Configuration | - |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.688nF |
205W 80V 2.8V 1.5mΩ@10V 1 N-channel N-Channel PG-LHDSO-10-3 Single FETs, MOSFETs RoHS