Infineon · FETs & Power MOSFETs · MPN IAUCN08S7N013ATMA1
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| Gate Charge(Qg) | 116nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 175A |
| Output Capacitance(Coss) | 3.409nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 219W |
| RDS(on) | 1.3mΩ@10V |
| Input Capacitance(Ciss) | 8.402nF |
| Type | N-Channel |
80V 175A 3.2V 219W 1.3mΩ@10V N-Channel TDSON-8(5.5x5.2) Single FETs, MOSFETs RoHS