Infineon · FETs & Power MOSFETs · MPN IAUCN08S7L013ATMA1
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| Output Capacitance(Coss) | 2.842nF |
|---|---|
| Pd - Power Dissipation | 219W |
| Configuration | - |
| Drain to Source Voltage | 80V |
| Gate Charge(Qg) | 120nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 1.14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.349nF |
219W 80V 1.6V 1.14mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS