Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N040HATMA1
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| Operating Temperature | -55℃~+175℃ |
|---|---|
| Output Capacitance(Coss) | 528pF |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| RDS(on) | 3.35mΩ@10V |
| Pd - Power Dissipation | 52W |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 906pF |
3.35mΩ@10V 52W 2.6V 1 N-channel SON-8 FET, MOSFET Arrays RoHS