Infineon IAUCN04S7N020ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N020ATMA1

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)993pF
Current - Continuous Drain(Id)139A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation75W
RDS(on)1.85mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 N-channel
Input Capacitance(Ciss)1.705nF
TypeN-Channel

Technical details

40V 139A 2.6V 75W 1.85mΩ@10V 1 N-channel N-Channel PG-TDSON-8-33 Single FETs, MOSFETs RoHS

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