Infineon IAUCN04S7N015ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N015ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)41nC@10V
Current - Continuous Drain(Id)173A
Output Capacitance(Coss)1.62nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation88W
RDS(on)1.53mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)66pF
Number1 N-channel
Input Capacitance(Ciss)2.792nF
TypeN-Channel

Technical details

N-Channel 40V 173A 88W Surface Mount TDSON-8(5.5x5.2)

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