Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N012ATMA1
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 214A |
| Output Capacitance(Coss) | 2.19nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 105W |
| RDS(on) | 1.51mΩ@7V |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| Input Capacitance(Ciss) | 3.757nF |
| Type | N-Channel |
40V 214A 3V 105W 1.51mΩ@7V N-Channel TDSON-8(5.5x5.2) Single FETs, MOSFETs RoHS