Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N009ATMA1
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| Gate Charge(Qg) | 74nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 268A |
| Output Capacitance(Coss) | 2.94nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 129W |
| RDS(on) | 0.96mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 113pF |
| Input Capacitance(Ciss) | 5.06nF |
| Type | N-Channel |
N-Channel 40V 268A 129W Surface Mount TDSON-8