Infineon IAUCN04S7N006ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N006ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)107nC@10V
Current - Continuous Drain(Id)370A
Output Capacitance(Coss)4.27nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation164W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)0.78mΩ@7V
Number1 N-channel
Input Capacitance(Ciss)7.349nF
TypeN-Channel

Technical details

N-Channel 40V 370A 164W Surface Mount TDSON-8

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