Infineon IAUCN04S7N005ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S7N005ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)127nC@10V
Output Capacitance(Coss)4.81nF
Current - Continuous Drain(Id)414A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation179W
RDS(on)0.55mΩ@10V
Input Capacitance(Ciss)8.32nF
TypeN-Channel

Technical details

N-Channel 40V 414A 179W Surface Mount TDSON-8

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