Infineon IAUCN04S7L028ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S7L028ATMA1

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)788pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)2.82mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.578nF
TypeN-Channel

Technical details

N-Channel 40V 100A 58W Surface Mount TDSON-8

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