Infineon · FETs & Power MOSFETs · MPN IAUCN04S7L019ATMA1
No reviews yet — be the first to review Infineon IAUCN04S7L019ATMA1.
| Output Capacitance(Coss) | 966pF |
|---|---|
| Pd - Power Dissipation | 75W |
| Configuration | - |
| Gate Charge(Qg) | 29nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 1.73mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.929nF |
75W 40V 1.5V 1.73mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS