Infineon · FETs & Power MOSFETs · MPN IAUCN04S7L011ATMA1
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 222A |
| Output Capacitance(Coss) | 1.636nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 105W |
| RDS(on) | 0.99mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.261nF |
| Type | N-Channel |
40V 222A 1.5V 105W 0.99mΩ@10V 1 N-channel N-Channel PG-TDSON-8-34 Single FETs, MOSFETs RoHS