Infineon · FETs & Power MOSFETs · MPN IAUCN04S7L009ATMA1
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2.203nF |
| Current - Continuous Drain(Id) | 275A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 129W |
| RDS(on) | 0.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.388nF |
| Type | N-Channel |
40V 275A 1.5V 129W 0.8mΩ@10V 1 N-channel N-Channel PG-TDSON-8-34 Single FETs, MOSFETs RoHS