Infineon · FETs & Power MOSFETs · MPN IAUCN04S7L004
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| Output Capacitance(Coss) | 4.918nF |
|---|---|
| Pd - Power Dissipation | 219W |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 146nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 162pF |
| RDS(on) | 0.37mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.785nF |
219W 40V 1.5V 0.37mΩ@10V 1 N-channel N-Channel PG-TDSON-8-53 Single FETs, MOSFETs RoHS