Infineon · FETs & Power MOSFETs · MPN IAUCN04S6N017TATMA1
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 49nC@10V |
| Output Capacitance(Coss) | 975pF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 103W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 2.05mΩ@7V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.25nF |
| Type | N-Channel |
N-Channel 40V 200A 103W LHDSO-10