Infineon · FETs & Power MOSFETs · MPN IAUCN04S6N013TATMA1
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 230A |
| Output Capacitance(Coss) | 1.08nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 133W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 1.32mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
40V 230A 2.6V 133W 1.32mΩ@10V 1 N-channel N-Channel PG-LHDSO-10-1 Single FETs, MOSFETs RoHS