Infineon IAUCN04S6N009TATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S6N009TATMA1

No reviews yet — be the first to review Infineon IAUCN04S6N009TATMA1.

Specifications

Gate Charge(Qg)104nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)330A
Output Capacitance(Coss)2.21nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)0.89mΩ@10V
Input Capacitance(Ciss)7.345nF
TypeN-Channel

Technical details

N-Channel 40V 330A 178W LHDSO-10

Related FETs & Power MOSFETs