Infineon · FETs & Power MOSFETs · MPN IAUCN04S6N007TATMA1
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Current - Continuous Drain(Id) | 390A |
| Output Capacitance(Coss) | 2.1nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 206W |
| RDS(on) | 0.68mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.95nF |
| Type | N-Channel |
40V 390A 2.6V 206W 0.68mΩ@10V 1 N-channel N-Channel PG-LHDSO-10-3 Single FETs, MOSFETs RoHS