Infineon IAUCN04S6N007TATMA1

Infineon · FETs & Power MOSFETs · MPN IAUCN04S6N007TATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)100nC@10V
Current - Continuous Drain(Id)390A
Output Capacitance(Coss)2.1nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation206W
RDS(on)0.68mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)6.95nF
TypeN-Channel

Technical details

40V 390A 2.6V 206W 0.68mΩ@10V 1 N-channel N-Channel PG-LHDSO-10-3 Single FETs, MOSFETs RoHS

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