Infineon IAUC60N10S5L110ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC60N10S5L110ATMA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)24.1nC@10V
Output Capacitance(Coss)278pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.665nF
TypeN-Channel

Technical details

N-Channel 100V 60A 88W Surface Mount TDSON-8

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