Infineon IAUC60N04S6N050HATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC60N04S6N050HATMA1

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)60A
Pd - Power Dissipation52W
RDS(on)5mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)26pF
Number2 N-Channel
Input Capacitance(Ciss)1.027nF
Gate Charge(Qg)17nC@10V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 40V 60A 52W Surface Mount TDSON-8

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