Infineon · FETs & Power MOSFETs · MPN IAUC60N04S6N031HATMA1
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 60A |
| RDS(on) | 3.1mΩ@10V |
| Pd - Power Dissipation | 75W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.922nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+175℃ |
N-Channel 40V 60A 75W Surface Mount TDSON-8