Infineon IAUC45N04S6L063HATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC45N04S6L063HATMA1

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)45A
Pd - Power Dissipation41W
RDS(on)6.3mΩ@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)23pF
Number2 N-Channel
Input Capacitance(Ciss)775pF
Gate Charge(Qg)13nC@10V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 40V 45A 41W Surface Mount TDSON-8

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