Infineon · FETs & Power MOSFETs · MPN IAUC26N10S5L245ATMA1
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 146pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 24.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 762pF |
| Type | N-Channel |
100V 26A 2.2V 40W 24.5mΩ@10V 1 N-channel N-Channel TDSON-8-33 Single FETs, MOSFETs RoHS