Infineon IAUC120N04S6L008ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC120N04S6L008ATMA1

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Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)0.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.91nF

Technical details

N-Channel 40V 120A 150W Surface Mount TDSON-8

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