Infineon · FETs & Power MOSFETs · MPN IAUC100N10S5L040
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.2nF |
100V 100A 1.7V 167W 4.3mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS