Infineon IAUC100N08S5N031

Infineon · FETs & Power MOSFETs · MPN IAUC100N08S5N031

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)31A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3pF

Technical details

80V 31A 2.5V 110W 3mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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