Infineon IAUC100N04S6N028ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC100N04S6N028ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)558pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)3.9mΩ@7V
Number1 N-channel
Input Capacitance(Ciss)1.781nF
TypeN-Channel

Technical details

N-Channel 40V 100A 62W Surface Mount TDSON-8

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