Infineon IAUC100N04S6N015ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUC100N04S6N015ATMA1

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.065nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)2.2mΩ@7V
Number1 N-channel
Input Capacitance(Ciss)3.47nF
TypeN-Channel

Technical details

N-Channel 40V 100A 100W Surface Mount TDSON-8

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