Infineon IAUAN04S7N006AUMA1

Infineon · FETs & Power MOSFETs · MPN IAUAN04S7N006AUMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)123nC@10V
Current - Continuous Drain(Id)410A
Output Capacitance(Coss)4.86nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation179W
RDS(on)0.57mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Number1 N-channel
Input Capacitance(Ciss)8.36nF
TypeN-Channel

Technical details

40V 410A 3V 179W 0.57mΩ@10V 1 N-channel N-Channel HSOF-5 Single FETs, MOSFETs RoHS

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