Infineon · FETs & Power MOSFETs · MPN IAUA200N04S5N010
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 0.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.65nF |
N-Channel 40V 200A 167W HSOF-5