Infineon IAUA180N10S5N029AUMA1

Infineon · FETs & Power MOSFETs · MPN IAUA180N10S5N029AUMA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)105nC@10V
Output Capacitance(Coss)1.231nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation221W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.673nF
TypeN-Channel

Technical details

100V 180A 3.8V 221W 3.4mΩ@10V 1 N-channel N-Channel HSOF-5-4 Single FETs, MOSFETs RoHS

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