Infineon · FETs & Power MOSFETs · MPN GS66516B-TR
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| Gate Charge(Qg) | 14.2nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 126pF |
| Current - Continuous Drain(Id) | 60A;47A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9pF |
| RDS(on) | 25mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 518pF |
650V 1.7V 25mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS