Infineon · FETs & Power MOSFETs · MPN GS66508T-MR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 6.1nC |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 65pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 50mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Number | - |
| Input Capacitance(Ciss) | 242pF |
650V 30A 1.7V 50mΩ Single FETs, MOSFETs RoHS