Infineon · FETs & Power MOSFETs · MPN GS66506T-TR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 4.5nC |
| Output Capacitance(Coss) | 49pF |
| Current - Continuous Drain(Id) | 22.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 67mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 185pF |
650V 22.5A 1.7V 67mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS