Infineon · FETs & Power MOSFETs · MPN GS66502BMRXUSA1
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| Gate Charge(Qg) | 1.6nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7.5A |
| Output Capacitance(Coss) | 17pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 200mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60pF |
650V 7.5A 1.7V 200mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS