Infineon GS61008P-TR

Infineon · FETs & Power MOSFETs · MPN GS61008P-TR

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)8nC
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)7mΩ
Number-
Input Capacitance(Ciss)600pF

Technical details

100V 90A 1.7V 7mΩ SMD-4P,7.6x4.6mm Single FETs, MOSFETs RoHS

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