Infineon · FETs & Power MOSFETs · MPN GS61008P-TR
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 8nC |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 7mΩ |
| Number | - |
| Input Capacitance(Ciss) | 600pF |
100V 90A 1.7V 7mΩ SMD-4P,7.6x4.6mm Single FETs, MOSFETs RoHS