Infineon · FETs & Power MOSFETs · MPN GS61004B-TR
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| Gate Charge(Qg) | 3.3nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 16mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 260pF |
100V 38A 1.7V 16mΩ 1 N-channel N-Channel SMD-3P,4.6x4.4mm Single FETs, MOSFETs RoHS