Infineon GS-065-018-2-L-TR

Infineon · FETs & Power MOSFETs · MPN GS-065-018-2-L-TR

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Specifications

Gate Charge(Qg)4nC
Drain to Source Voltage850V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)34pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)78mΩ
Reverse Transfer Capacitance (Crss@Vds)0.4pF
Number-
Input Capacitance(Ciss)132pF

Technical details

850V 18A 1.7V 78mΩ PDFN-8(8x8) Single FETs, MOSFETs RoHS

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