Infineon · FETs & Power MOSFETs · MPN GS-065-011-1-L-TR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 2.2nC |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| RDS(on) | 150mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 70pF |
650V 11A 1.7V 150mΩ 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS