Infineon GS-065-011-1-L-MR

Infineon · FETs & Power MOSFETs · MPN GS-065-011-1-L-MR

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)2.2nC
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)0.4pF
RDS(on)150mΩ
Number-
Input Capacitance(Ciss)70pF

Technical details

650V 11A 1.7V 150mΩ PDFN-8(5x6) Single FETs, MOSFETs RoHS

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