Infineon GS-065-008-6-L-TR

Infineon · FETs & Power MOSFETs · MPN GS-065-008-6-L-TR

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Specifications

Gate Charge(Qg)1.6nC
Drain to Source Voltage700V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)8.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)165mΩ
Reverse Transfer Capacitance (Crss@Vds)0.3pF
Number1 N-channel
Input Capacitance(Ciss)54pF

Technical details

700V 8.8A 1.7V 165mΩ 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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