Infineon · Thyristors & Power Discretes · MPN FS35R12KE3G
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| Pd - Power Dissipation | 200W |
|---|---|
| Current - Collector(Ic) | 55A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.5nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,35A |
| Operating Temperature | -40℃~+125℃@(Tj) |
200W 55A 1.2kV IGBT Modules RoHS