Infineon · Thyristors & Power Discretes · MPN FS100R12KS4
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| Pd - Power Dissipation | 660W |
|---|---|
| Operating Temperature | -40℃~+125℃ |
| Current - Collector(Ic) | 130A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.8nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
660W 130A 1.2kV Single IGBTs RoHS