Infineon · Thyristors & Power Discretes · MPN FF650R17IE4DPB2
No reviews yet — be the first to review Infineon FF650R17IE4DPB2.
| Current - Collector(Ic) | 650A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 54nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃ |
650A 1.7kV FS (Field Stop) IGBT Modules RoHS