Infineon FD450R12KE4P

Infineon · Thyristors & Power Discretes · MPN FD450R12KE4P

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Specifications

Current - Collector(Ic)450A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃

Technical details

450A 1.2kV FS (Field Stop) IGBT Modules RoHS

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