Infineon · Thyristors & Power Discretes · MPN FD200R12PT4B6
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| Pd - Power Dissipation | 1.1kW |
|---|---|
| Current - Collector(Ic) | 300A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 12.5nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,200A |
| Operating Temperature | -40℃~+150℃ |
1.1kW 300A 1.2kV FS (Field Stop) IGBT Modules RoHS