Infineon · FETs & Power MOSFETs · MPN F411MR12W2M1B76BOMA1
No reviews yet — be the first to review Infineon F411MR12W2M1B76BOMA1.
| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 248nC@15V |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.55V |
| RDS(on) | 11.3mΩ@15V |
| Number | 4 N-Channel |
| Input Capacitance(Ciss) | 7.36nF |
1.2kV 100A 5.55V 11.3mΩ@15V 4 N-Channel AG-EASY1B-2 Single FETs, MOSFETs RoHS