Infineon · FETs & Power MOSFETs · MPN DF11MR12W1M1B11
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| Gate Charge(Qg) | 124nC@5V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.45V |
| RDS(on) | 22.5mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.68nF |
1.2kV 50A 3.45V 22.5mΩ@15V 1 N-channel Single FETs, MOSFETs RoHS