Infineon BUZ32HXKSA1

Infineon · FETs & Power MOSFETs · MPN BUZ32HXKSA1

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)530pF

Technical details

200V 9.5A 75W 400mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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